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Silicon Carbide
Silicon Carbide (SiC) has good high temperature strength and thermal
shock resistance, and is also highly wear resistant. There are two
main methods for SiC production, sintering and reaction bonded. Sintered
SiC is produced from pure SiC powder with non-oxide sintering aids.
Conventional ceramic forming processes are used and the material is
sintered in an inert atmosphere at temperatures up to 2000°C or
higher. Reaction bonded SiC is made by infiltrating compacts made
of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts
with the Carbon forming SiC. The reaction product bonds the SiC particles.
Microwave sintering of SiC has been demonstrated at Ceralink. SiC
also used extensively as a microwave susceptors because SiC couples
with microwave energy directly from room temperature and radiates
the heat.
Major uses of Silicon Carbide: turbine components, kiln
furniture, seals, bearings, wear plates, pump vanes, heat exchangers,
ball valve parts, semiconductor wafer processing equipment
Material: Ceramic
Chemical Formula: SiC
Properties: Low density, high strength, good high temperature
strength (Reaction bonded), oxidation resistance (Reaction bonded),
excellent thermal shock resistance, high hardness and wear resistance,
excellent chemical resistance, low thermal expansion and high thermal
conductivity, electrical conductivity
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